BCR114_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R₁=4.7kΩ, R₂=10kΩ)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCR114...
BCR114F
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR114F
Marking
Pin Configuration
U4s 1=B 2=E 3=C -
-
-
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR114F, T_S ≤ 128°C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_i(fwd)
V_i(rev)
I_C
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾, BCR114F
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
50
50
30
5
100
250
150
-65 ... 150
Value
≤ 90
Unit
V
mA
mW
°C
Unit
K/W
1
2007-09-17