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BCP28 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
PNP Silicon Darlington Transistors
 For general AF applications
 High collector current
 High current gain
 Complementary types: BCP29/49 (NPN)
B(1)
BCP28, BCP48
4
C(2,4)
3
2
1
VPS05163
Type
BCP28
BCP48
Marking
BCP 28
BCP 48
1=B
1=B
E(3)
EHA00008
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCP28
BCP48
30
60
40
80
10
10
500
800
100
200
1.5
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mA
W
°C
K/W
1
Nov-29-2001