BC847S Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

BC847S
NPN Silicon AF Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two ( galvanic) internal isolated Transistors
with good matching in one package
C1
B2
E2
6
5
4
4
5
6
3
2
1
VPS05604
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BC847S
Marking
1Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
R_thJS
Value
Unit
45
V
50
50
6
100
mA
200
250
mW
150
°C
-65 ... 150

140
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Nov-29-2001