BC847PN Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC847PN
NPN/PNP Silicon AF Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two (galvanic) internal isolated NPN/PNP
Transistors in one package
4
5
6
Tape loading orientation
Top View
654
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
C1
B2
E2
6
5
4
W1s
123
Direction of Unreeling
TR2
Position in tape: pin 1
TR1
opposite of feed hole side
EHA07193
1
2
3
E1
B1
C2
EHA07177
3
2
1
VPS05604
Type
Marking
Pin Configuration
Package
BC847PN
1Ps
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
45
V
50
50
V
5
V
100
mA
200
250
mW
150
°C
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

140
K/W
1
Jul-02-2001