BC817W Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose transistor

NPN Silicon AF Transistors

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BC807W, BC808W (PNP)
BC817W, BC818W
3
2
1
VSO05561
Type
BC817-16W
BC817-25W
BC817-40W
BC818-16W
BC818-25W
BC818-40W
Marking
6As
6Bs
6Cs
6Es
6Fs
6Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 130 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
BC817W
BC818W
45
25
50
30
5
5
500
1
100
200
250
150
-65 ... 150
R_thJS

80
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
A
mA
mW
°C
K/W
1
Nov-29-2001