BC817U_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-saturation voltage
• Two (galvanic) internal isolated transistors
with good matching in one package
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BC817U
4
5
3
6
2
1
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BC817U
Marking
Pin Configuration
Package
6Bs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T_S ≤ 115 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
45
V
50
5
500
mA
1000
100
200
330
mW
150
°C
-65 ... 150
1
2007-04-20