BC817U Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon Transistor Array

BC817U
NPN Silicon Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two ( galvanic) internal isolated Transistors
with good matching in one package
C1
B2
E2
6
5
4
4
5
6
3
2
1
VPW09197
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BC817U
Marking
6Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Value
45
50
5
500
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

105
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
A
mA
mW
°C
K/W
1
Nov-29-2001