BC817SU_08 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon AF Transistor

NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BC817SU
4
5
3
6
2
1
Type
BC817SU
Marking
Pin Configuration
Package
B6s
1=E 2=C 3=C 4=C 5=C 6=B SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S ≤ 100°C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
45
50
5
500
1
100
200
1000
150
-65 ... 150
Value
≤ 50
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1
2008-10-20