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BC807W Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP general purpose transistor
PNP Silicon AF Transistors
 For general AF applications
 High collector current
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BC817W, BC818W (NPN)
BC807W, BC808W
3
2
1
VSO05561
Type
BC807-16W
BC807-25W
BC807-40W
BC808-16W
BC808-25W
BC808-40W
Marking
5As
5Bs
5Cs
5Es
5Fs
5Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter
Symbol BC 807W
BC 808W
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
45
25
50
30
5
5
500
1
100
200
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
80
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1
Nov-29-2001