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BAW79A Datasheet, PDF (1/3 Pages) Infineon Technologies AG – Silicon Switching Diodes
BAW79A...BAW79D
Silicon Switching Diodes
 Switching applications
 High breakdown voltage
 Common cathode
1
2
3
2
VPS05162
2
1
3
EHA07003
Type
BAW79A
BAW79B
BAW79C
BAW79D
Marking
GE
GF
GG
GH
1 = A1
1 = A1
1 = A1
1 = A1
Pin Configuration
2 = C1/2 3 = A2
2 = C1/2 3 = A2
2 = C1/2 3 = A2
2 = C1/2 3 = A2
Package
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 s
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VR
VRM
IF
IFM
IFS
Ptot
Tj
Tstg
BAW
79A
50
50
BAW BAW
79B 79C
100 200
100 200
1
1
10
1
150
-65 ... 150
BAW Unit
79D
400 V
400
A
W
°C
Thermal Resistance
Junction - soldering point1)
RthJS
 35
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Aug-20-2001