BAW156_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Low Leakage Diode

Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Common anode configuration
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAW156...
BAW156
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Type
BAW156
Package
SOT23
Configuration
common anode
Marking
JZs
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
V_R
V_RM
I_F
80
V
85
200
mA
Non-repetitive peak surge forward current
t = 1 µs
I_FSM
A
4.5
t=1s
0.5
Total power dissipation
T_s ≤ 31°C
Junction temperature
P_tot
250
mW
T_j
150
°C
Storage temperature
T_stg
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point²⁾
BAW156
Symbol
R_thJS
Value
Unit
≤ 360
K/W
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
1
2007-04-20