BAW156 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Low-leakage double diode

Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Common anode configuration
BAW156...
BAW156
3
D1
D2
1
2
Type
BAW156
Package
SOT23
Configuration
common anode
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
V_R
V_RM
I_F
I _FSM
t=1s
Total power dissipation
P_tot
T_s ≤ 31°C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BAW156
Symbol
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JZs
Value
Unit
80
V
85
200
mA
A
4.5
0.5
250
mW
150
°C
-65 ... 150
Value
Unit
≤ 360
K/W
1
Mar-10-2004