BAW101_07 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – Silicon Switching Diode

Silicon Switching Diode
• Electrically insulated high-voltage
medium-speed diodes
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAW101...
BAW101
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Type
Package
Configuration
BAW101
SOT143
parallel
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Peak reverse voltage
V_RM
Forward current
I_F
Peak forward current
I_FM
Peak forward current
I_FM
Surge forward current, t = 1 µs
I_FS
Non-repetitive peak surge forward current
I_FSM
Total power dissipation
P_tot
T_S ≤ 35°C
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Marking
JPs
Value
Unit
300
V
300
250
mA
500
500
mA
4.5
A
-
350
mW
150
°C
-65 ... 150
1
2007-04-20