BAW101 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)

Silicon Switching Diode
• Electrically insulated high-voltage
medium-speed diodes
BAW101...
BAW101
4
D1
3
D2
1
2
Type
BAW101
Package
SOT143
Configuration
parallel
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Peak reverse voltage
V_RM
Forward current
I_F
Peak forward current
I_FM
Surge forward current, t = 1 µs
I_FS
Total power dissipation
P_tot
T_S ≤ 35°C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BAW101
Symbol
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JPs
Value
Unit
300
V
300
250
mA
500
4.5
A
350
mW
150
°C
-65 ... 150
Value
Unit
≤ 330
K/W
1
Sep-24-2003