BAT165_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Medium Power AF Schottky Diode

Medium Power AF Schottky Diode
• Forward current: 750 mA
Reverse voltage: 40 V
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAT165...
BAT165

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT165
Package
SOD323
Configuration
single
Marking
C/White
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage²⁾
Forward current²⁾
V_R
40
V
I_F
750
mA
Average rectified forward current (50/60Hz, sinus) I_FAV
500
mA
Non-repetitive peak surge forward current
(t ≤ 10ms)
I _FSM
2.5
A
Total power dissipation
T_S ≤ 93°C
Junction temperature
Storage temperature
P_tot
600
mW
T_j
150
°C
T_stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point³⁾
R_thJS
≤ 95
1_{Pb-containing package may be available upon special request}
2_{For TA > 25°C the derating of VR and IF has to be considered. Please refer to the atteched curves.}
3_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
K/W
1
2007-04-19