BAS52_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – Silicon Schottky Diode

Silicon Schottky Diode
• Medium current rectifier Schottky diode
• Low forward voltage at 200mA
• High reverse voltage
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAS52...
BAS52-02V

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Configuration
BAS52-02V
SC79
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Forward current
I_F
Average rectified forward current (50/60Hz, sinus) I_FAV
Non-repetitive peak surge forward current
I_FSM
t = 100 µs
Total power dissipation
P_tot
T_S ≤ 110°C
Junction temperature
T_j
Storage temperature
T_stg
Marking
y
Value
Unit
45
V
750
mA
500
mA
2000
500
mW
150
°C
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 60
Unit
K/W
1
2007-04-19