BAS52 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Silicon Schottky Diode

Silicon Schottky Diode

Medium current rectifier Schottky diode

Low forward voltage at 200mA

High reverse voltage
BAS52...
BAS52-02V
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAS52-02V
Package
SC79
Configuration
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Surge forward current (t = 100µs)
Average forward current (50/60Hz, sinus)
Total power dissipation
T_S
110°C
Junction temperature
Storage temperature
V_R
I_F
I_FSM
I_FAV
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
45
750
2000
500
500
150
-65 ... 150
Value

60
Marking
y
Unit
V
mA
mW
°C
Unit
K/W
1
Nov-04-2002