BAS3010A Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Medium Power AF Schottky Diode

Medium Power AF Schottky Diode
• Forward current: 1 A
• Reverse voltage: 30 V
• Very low forward voltage
(typ. 0.41V @ I_F = 1A)
• For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAS3010A...
BAS 3010A-03W

Type
BAS3010A-03W
Package
SOD323
Configuration
single
Marking
4/ blue
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage²⁾
Forward current²⁾
V_R
30
V
I_F
1
A
Average rectified forward current (50/60Hz, sinus) I_FAV
1
Repetitive peak forward current
(t_p ≤ 1 ms, D ≤ 0.5)
I _FRM
3.5
Non-repetitive peak surge forward current
I _FSM
10
(t ≤ 10ms)
Junction temperature
T_j
150
°C
Operating temperature range
T_op
-65 ... 125
Storage temperature
T_stg
-65 ... 150
1_{Pb-containing package may be available upon special request}
2_{For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.}
1
2007-04-10