BAS28 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

Silicon Switching Diode

For high-speed switching applications

Electrical insulated diodes
BAS28...
BAS28/W
4
D1
3
D2
1
2
Type
BAS28
BAS28W
Package
SOT143
SOT343
Configuration
parallel pair
parallel pair
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Peak reverse voltage
V_RM
Forward current
I_F
Surge forward current, t = 1 µs
I_FS
Total power dissipation
P_tot
BAS28, T_S
31°C
BAS28W, T_S
103°C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BAS28
BAS28W
Symbol
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JTs
JTs
Value
Unit
80
V
85
200
mA
4.5
A
mW
330
250
150
°C
-55 ... 150
Value

360

190
Unit
K/W
1
Feb-21-2003