BAS19 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose diodes

BAS19...BAS21
Silicon Switching Diodes
3

High-speed, high-voltage switching applications
1
3
EHA07002
2
1 _VPS05161
Type
BAS19
BAS20
BAS21
Marking
JPs
JRs
JSs
Pin Configuration
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
Package
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Diode reverse voltage
BAS19
BAS20
BAS21
Symbol
V_R
Value
100
150
200
Peak reverse voltage-
BAS19
BAS20
BAS21
V_RM
120
200
250
Forward current
Peak forward current
Total power dissipation
T_S = 70 °C
Junction temperature
Storage temperature
I_F
250
I_FM
625
P_tot
350
T_j
150
T_stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value

230
Unit
V
mA
mW
°C
Unit
K/W
1
Aug-06-2001