BAS170W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

BAS170W
Silicon Schottky Diode

General-purpose diode for high-speed switching

Circuit protection

Voltage clamping

High-level detection and mixing
2
1
VPS05176
Type
BAS170W
Marking
Pin Configuration
7
1=C
2=A
-
Package
SOD323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current, t
10 ms
Total power dissipation
T_S = 97 °C
Junction temperature
Operating temperature range
Storage temperature
Symbol
V_R
I_F
I_FSM
P_tot
T_j
T_op
T_stg
Value
Unit
70
V
70
mA
100
250
mW
150
°C
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value

190
Unit
K/W
1
Aug-06-2001