BAS125W Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)

BAS125W
Silicon Schottky Diodes

For low-loss, fast-recovery, meter protection,
3
bias isolation and clamping applications

Integrated diffused guard ring

Low forward voltage
2
BAS125W
BAS125-04W
3
BAS125-05W
3
BAS125-06W
3
1
VSO05561
1
1
3
EHA07002
21
EHA07005
2
1
EHA07004
2
EHA07006
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAS125W
13s
1=A
2 n.c.
3=C
SOT323
BAS125-04W
14s
1 = A1
2 = C2
3 = C1/A2 SOT323
BAS125-05W
15s
1 = A1
2 = A2
3 = C1/2 SOT323
BAS125-06W
16s
1 = C1
2 = C2
3 = A1/2 SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
Forward current
Surge forward current (t
100s)
Total power dissipation BAS125W, T_S = 93 °C
BAS 125-04W...06W
, T_S = 84 °C
Junction temperature
Operating temperature range
Storage temperature
V_R
I_F
I_FSM
P_tot
P_tot
T_j
T_op
T_stg
25
V
100
mA
500
250
mW
250
150
°C
-55 ... 150
-55 ... 150
Thermal Resistance
Junction - soldering point¹⁾
BAS125W
R_thJS
K/W

230
BAS125-04W...06W

265
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Nov-15-2001