BAS125 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAS125...
BAS125-04W
!
,
,

BAS125-05W
!
,
,

BAS125-06W
!
,
,

BAS125-07W
"
!
,
,

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAS125-04W
BAS125-05W
BAS125-06W
BAS125-07W
Package
SOT323
SOT323
SOT323
SOT343
Configuration
series
common cathode
common anode
parallel pair
L_S(nH)
1.4
1.4
1.4
1.6
Marking
14s
15s
16s
17s
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
Total power dissipation
BAS125-04W, BAS125-06W, T_S ≤ 84°C
BAS125-05W, T_S ≤ 76°C
BAS125-07W, T_S ≤ 96°C
V_R
I_F
I _FSM
P_tot
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Value
25
100
500
250
250
250
150
-55 ... 150
Unit
V
mA
mW
°C
1
2007-04-19