BAS125-07W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

BAS125-07W
Silicon Schottky Diode

For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications

Integrated diffused guard ring

Low forward voltage
3
4
2
1
VPS05605
4
1
3
2
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAS125-07W
Marking
17s
Pin Configuration
Package
1 = C1 2 = C2 3 = A2 4 = A1 _SOT343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t
100s)
Total power dissipation, T_S = 96 °C
Junction temperature
Storage temperature
Symbol
V_R
I_F
I_FSM
P_tot
T_j
T_stg
Value
Unit
25
V
100
mA
500
250
mW
150
°C
-55 ... 150
Maximum Ratings
Junction - soldering point¹⁾
R_thJS

215
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-16-2001