BAS116_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Low Leakage Diode

Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAS116...
BAS116
!

Type
BAS116
Package
SOT23
Configuration
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
V_R
V_RM
I_F
I_FSM
t=1s
Total power dissipation
P_tot
T_S ≤ 54°C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Junction - soldering point²⁾
BAS116
Symbol
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JVs
Value
80
85
250
4.5
0.5
370
Unit
V
mA
A
mW
150
°C
-65 ... 150
Value
≤ 260
Unit
K/W
1
2007-04-19