BAS116 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Low-leakage diode

Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
BAS116...
BAS116
3
1
2
Type
BAS116
Package
SOT23
Configuration
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
V_R
V_RM
I_F
I _FSM
t=1s
Total power dissipation
T_S ≤ 54°C
Junction temperature
Storage temperature
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BAS116
Symbol
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JVs
Value
80
85
250
4.5
0.5
370
150
-65 ... 150
Unit
V
mA
A
mW
°C
Value
≤ 260
Unit
K/W
1
Mar-10-2004