BAR81WH6327 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon RF Switching Diode

Silicon RF Switching Diode
• Designed for use in shunt configuration in
high performance RF switches
• High shunt signal isolation
• Low shunt insertion loss
• Optimized for short - open transformation
using λ/4 lines
• Pb-free (RoHS compliant) package
BAR81...
BAR81W
"
!

Type
BAR81W
Package
SOT343
* series inductance chip to ground
Configuration
single shunt-diode
L_S(nH) Marking
0.15* BBs
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
V_R
Forward current
I_F
Total power dissipation
P_tot
T_s ≤ 138°C
Junction temperature
T_j
Operating temperature range
T_op
Storage temperature
T_stg
Value
30
100
100
150
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 120
Unit
V
mA
mW
°C
Unit
K/W
1
2011-06-14