BAR81 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diodes

Design for use in shunt configuration

High shunt signal isolation

Low shunt insertion loss
BAR81
3
4
2
1
VSO05553
Type
BAR81
Marking
BBs
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Pin Configuration
1=C 2=A 3=C 4=A
Package
MW-4
Symbol
V_R
I_F
T_j
T_op
T_stg
Value
Unit
30
V
100
mA
150
°C
-55 ... 125
-55 ... 150
1
Aug-21-2001