BAR80 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode

Design for use in shunt configuration

High shunt signal isolation

Low shunt insertion loss
BAR80
3
4
2
1
VSO05553
Type
BAR80
Marking
AAs
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Pin Configuration
1=C 2=A 3=C 4=A
Package
MW-4
Symbol
V_R
I_F
T_j
T_op
T_stg
Value
Unit
35
V
100
mA
150
°C
-55 ... 125
-55 ... 150
1
Aug-17-2001