BAR66_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon PIN Diode Array

Silicon PIN Diode Array
• Surge protection device
• Designed for surge overvoltage clamping
in antiparallel connection
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAR66...
BAR66
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Type
BAR66
Package
SOT23
Configuration
series
L_S(nH) Marking
1.8 PMs
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Forward current
Total power dissipation
T_s ≤ 25 °C
ESD contact discharge²⁾
Peak pulse current (t_p = 8 / 20 µs)³⁾
Junction temperature
V_R
I_F
P_tot
V_ESD
I_pp
T_j
150
V
200
mA
250
mW
25
kV
12
A
150
°C
Operating temperature range
T_op
-55 ... 125
Storage temperature
T_stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point⁴⁾, BAR 66
R_thJS
1_{Pb-containing package may be available upon special request}
2_{VESD according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected}
3_{Ipp according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected}
4_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 290
Unit
K/W
1
2007-04-19