BAL99_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Switching Diode

Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BAL99...
BAL99
!

Type
BAL99
Package
SOT23
Configuration
single
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage-
Forward current
Peak forward current
Surge forward current, t = 1 µs
Total power dissipation
T_S ≤ 54°C
V_R
V_RM
I_F
I_FM
I_FS
P_tot
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
JFs
Value
Unit
80
V
85
250
mA
-
4.5
A
370
mW
150
°C
-65 ... 150
Value
Unit
≤ 260
K/W
1
2007-04-19