AUIRLS4030 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
Features
 Optimized for Logic Level Drive
 Advanced Process Technology
 Ultra Low On-Resistance
 Logic Level Gate Drive
175°C Operating Temperature
G
Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche rat-
ing . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
AUIRLS4030
AUIRLSL4030
HEXFET^® Power MOSFET
D
V_DSS
100V
R_DS(on) typ.
max
3.4m
4.3m
S
I_D
180A
D
D
S
G
D²Pak
AUIRLS4030
G
Gate
D
Drain
S
D
G
TO-262
AUIRLSL4030
S
Source
Base part number
AUIRLSL4030
AUIRLS4030
Package Type
TO-262
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLSL4030
AUIRLS4030
AUIRLS4030TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b
21
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient (PCB Mount), D2 Pak
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-6