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AUIRLS3036-7P Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET | |||
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AUTOMOTIVE GRADE
Features
ï· Advanced Process Technology
ï· Ultra Low On-Resistance
ï· Logic Level Gate Drive
ï· Dynamic dv/dt Rating
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
AUIRLS3036-7P
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
1.5mï
1.9mï
300Aï
240A
G
Gate
D2Pak 7 Pin
AUIRLS3036-7P
D
Drain
S
Source
Base Part Number
AUIRLS3036-7P
Package Type
D2Pak 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3036-7P
AUIRLS3036-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Peak Diode Recovery ï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
300ï
210
240
1000
380
2.5
± 16
300
See Fig.14,15, 22a, 22b
8.1
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ïï
Rï±JA
Junction-to-Ambient ï
Typ.
âââ
âââ
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-4
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