AUIRLR3410 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dV/dT Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
V_DSS
R_DS(on)
I_D
G
Gate
Base part number
AUIRLR3410
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
AUIRLR3410
HEXFET^® Power MOSFET
100V
max.
105m
17A
D
S
G
D-Pak
AUIRLR3410
D
Drain
S
Source
Orderable Part Number
AUIRLR3410
AUIRLR3410TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
17
12
60
79
0.53
Units
A
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Pead Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 16
150
9.0
7.9
5.0
-55 to + 175
300
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient ( PCB Mount) 
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
2015-10-29