AUIRLR3114Z Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Logic Level Gate Drive
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRLR3114Z
AUIRLU3114Z
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
4.9m
6.5m
130A
42A
D
D
S
G
D-Pak
AUIRLR3114Z
S
GD
I-Pak
AUIRLU3114Z
G
Gate
D
Drain
S
Source
Base part number
AUIRLU3114Z
AUIRLR3114Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU3114Z
AUIRLR3114Z
AUIRLR3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
130
89
42
500
140
0.95
Units
A
W
W/°C
V_GS
E_AS
E_AS (Tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
± 16
V
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
130
260
mJ
Avalanche Current 
See Fig.15,16, 12a, 12b
A
Repetitive Avalanche Energy 
mJ
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient ( PCB Mount) 
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
1
2015-10-29