AUIRLR2905 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
Features
 Advanced Planar Technology
 Logic Level Gate Drive
 Low On-Resistance
 Dynamic dV/dT Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
V_DSS
R_DS(on)
I_D
D
HEXFET^® Power MOSFET
55V
max.
27m
42A
D
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
S
G
D-Pak
AUIRLR2905
G
Gate
D
Drain
S
GD
I-Pak
AUIRLU2905
S
Source
Base part number
AUIRLU2905
AUIRLR2905
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU2905
AUIRLR2905
AUIRLR2905TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
42
30
160
110
0.71
Units
A
W
W/°C
V_GS
E_AS
E_{AS (tested)}
I_AR
E_AR
dv/dt
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy (tested Value) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 16
210
200
25
11
5.0
-55 to + 175
300
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient ( PCB Mount) 
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2015-12-11