AUIRLL024Z Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Logic Level Gate Drive
 150°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRLL024Z
HEXFET^® Power MOSFET
V_DSS
55V
R_DS(on) typ.
48m
max.
60m
I_D
5.0A
D
S
D
G
SOT-223
AUIRLL024Z
G
Gate
D
Drain
S
Source
Base part number
AUIRLL024Z
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
AUIRLL024ZTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
V_GS
E_AS
E_{AS (Tested)}
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation (PCB Mount) 
Maximum Power Dissipation (PCB Mount) 
Linear Derating Factor (PCB Mount) 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy (Tested Value) 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig. 12a, 12b, 15, 16
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient (PCB Mount, steady state) 
R_JA
Junction-to-Ambient (PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
45
120
Units
°C/W
2015-10-29