AUIRL1404S Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
Features
 Advanced Planar Technology
 Logic Level Gate Drive
 Low On-Resistance
 Dynamic dV/dT Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in Automotive and a wide variety of other applications.
AUIRL1404S
AUIRL1404L
HEXFET^® Power MOSFET
V_DSS
40V
R_DS(on) max.
4.0m
I_D
160A
D
D
S
G
D²Pak
AUIRL1404S
S
GD
TO-262
AUIRL1404L
G
Gate
D
Drain
S
Source
Base part number
AUIRL1404L
AUIRL1404S
Package Type
TO-262
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRL1404L
AUIRL1404S
AUIRL1404STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
160
110
640
3.8
200
1.3
± 20
520
95
20
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_CS
R_JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount), D² Pak
Typ.
–––
0.50
–––
Max.
0.75
–––
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-27