AUIRFZ44VZS Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
AUIRFZ44VZS
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_D
60V
9.6m
12m
57A
D
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
G
Gate
Base part number
AUIRFZ44VZS
Package Type
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
S
G
D²Pak
AUIRFZ44VZS
D
Drain
S
Source
Orderable Part Number
AUIRFZ44VZS
AUIRFZ44VZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_{AS (Thermally Limited)}
E_{AS (Tested)}
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy (Tested Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
57
40
230
92
0.61
± 20
73
110
See Fig. 12a, 12b, 15, 16
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient (PCB Mount), D² Pak 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
1.64
40
Units
°C/W
2015-10-27