AUIRFS4310Z Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
AUIRFS4310Z
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
100V
4.8m
6.0m
127A
120A
D
G
Gate
S
G
D²Pak
AUIRFS4310Z
D
Drain
S
Source
Base part number
AUIRFS4310Z
Package Type
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS4310Z
AUIRFS4310ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
127
90
120
560
250
1.7
± 20
130
See Fig.14,15, 22a, 22b
18
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient (PCB Mount), D² Pak
Typ.
–––
–––
Max.
0.6
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-12-4