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| AUIRFS4127 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – AUTOMOTIVE GRADE | |||
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AUTOMOTIVE GRADE
Features
ï¬ï Advanced Process Technology
ï¬ï Ultra Low On-Resistance
ï¬ï 175°C Operating Temperature
ï¬ï Fast Switching
ï¬ Repetitive Avalanche Allowed up to Tjmax
ï¬ Lead-Free, RoHS Compliant
ï¬ Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
G
S
D
AUIRFS4127
AUIRFSL4127
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
200V
18.6mïï
22mïï
72A
D
G
Gate
S
G
D2Pak
AUIRFS4127
D
Drain
S
D
G
TO-262
AUIRFSL4127
S
Source
Base part number
AUIRFSL4127
AUIRFS4127
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4127
AUIRFS4127
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ï
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery ï
Single Pulse Avalanche Energy (Thermally limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
72
51
300
375
2.5
± 20
57
250
See Fig. 14, 15, 22a, 22b
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ïï
Rï±JA
Junction-to-Ambient ï
Typ.
âââ
âââ
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-27
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