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| AUIRFS3806 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET | |||
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AUTOMOTIVE GRADE
AUIRFS3806
Features
ï· Advanced Process Technology
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID
60V
12.6mï
15.8mï
43A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D
G
Gate
S
G
D2Pak
AUIRFS3806
D
Drain
S
Source
Base part number
AUIRFS3806
Package Type
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3806
AUIRFS3806TRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Peak Diode Recovery ï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
43
31
170
71
0.47
± 20
73
25
7.1
24
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ï
Rï±JA
Junction-to-Ambient (PCB Mount), D2 Pakï ï
Typ.
âââ
âââ
Max.
2.12
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-12-2
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