AUIRFS3004 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
AUIRFS3004
AUIRFSL3004
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
1.4m
1.75m
340A
195A
D
D
S
G
D²Pak
AUIRFS3004
G
Gate
S
GD
TO-262
AUIRFSL3004
D
Drain
S
Source
Base part number
AUIRFSL3004
AUIRFS3004
Package Type
TO-262
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL3004
AUIRFS3004
AUIRFS3004TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
340
I_D @ T_C = 100°C
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
240
195
A
I_DM
P_D @T_C = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
1310
380
2.5
W
W/°C
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery 
± 20
V
4.4
V/ns
E_AS
Single Pulse Avalanche Energy (Thermally Limited) 
300
mJ
I_AR
Avalanche Current 
See Fig.14,15, 22a, 22b
A
E_AR
Repetitive Avalanche Energy 
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient (PCB Mount), D² Pak
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-20