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AUIRFS3004-7P Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance | |||
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AUTOMOTIVE GRADE
Features
ï· Advanced Process Technology
ï· Ultra Low On-Resistance
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
AUIRFS3004-7P
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
0.90mï
1.25mï
400Aï
240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
G
Gate
D2Pak 7 Pin
D
Drain
S
Source
Base Part Number
AUIRFS3004-7P
Package Type
D2Pak 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3004-7P
AUIRFS3004-7PTRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Peak Diode Recovery ï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
400ï
280ï
240
1610
380
2.5
± 20
290
See Fig.14,15, 22a, 22b
2.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ïï
Rï±JA
Junction-to-Ambient ( PCB Mount) ï
Typ.
âââ
âââ
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-20
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