AUIRFR8401 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFR8401
AUIRFU8401
Features
 Advanced Process Technology
 New Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
3.2m
4.25m
100A
100A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide variety of
other applications.
Applications
 Electric Power Steering (EPS)
 Battery Switch
 Start/Stop Micro Hybrid
 Heavy Loads
 DC-DC Converter
D
D
S
G
D-Pak
AUIRFR8401
G
Gate
D
Drain
S
GD
I-Pak
AUIRFU8401
S
Source
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRFU8401
I-Pak
Tube
75
AUIRFU8401
AUIRFR8401
D-Pak
Tube
Tape and Reel Left
75
3000
AUIRFR8401
AUIRFR8401TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
100
71
100
400
79
0.53
A
W
W/°C
V_GS
Gate-to-Source Voltage
± 20
V
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
E_AS
Single Pulse Avalanche Energy (Thermally Limited) 
E_AS (tested)
Single Pulse Avalanche Energy (Tested Limited) 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
67
94
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
Thermal Resistance
Symbol
R_JC
R_JA
R_JA
Parameter
Junction-to-Case 
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
2016-1-28