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AUIRFR6215 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUTOMOTIVE GRADE
Features
ï· Advanced Planar Technology
ï· Low On-Resistance
ï· P-Channel
ï· Dynamic dv/dt Rating
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Fully Avalanche Rated
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications of HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
VDSS
RDS(on)
ID
AUIRFR6215
max.
-150V
0.295ïï
-13A
D
S
G
D-Pak
AUIRFR6215
G
Gate
D
Drain
S
Source
Base part number
AUIRFR6215
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR6215
AUIRFR6215TRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ïï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ïï
Avalanche Current ïï
Repetitive Avalanche Energy ïï
Peak Diode Recovery dv/dtï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ïï
Rï±JA
Junction-to-Ambient ( PCB Mount) ï
Rï±JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300
Typ.
âââ
âââ
âââ
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2015-10-12
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