AUIRFR540Z Datasheet, PDF (1/12 Pages) International Rectifier – Automatic Voltage Regulator

AUTOMOTIVE GRADE
Application
 Automatic Voltage Regulator (AVR)
 Solenoid Injection
 Body Control
 Low Power Automotive Applications
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
V_DSS
R_DS(on)
I_D
D
AUIRFR540Z
AUIRFU540Z
HEXFET^® Power MOSFET
typ.
max.
100V
22.5m
28.5m
35A
D
G
Gate
S
G
D-Pak
AUIRFR540Z
D
Drain
S
GD
I-Pak
AUIRFU540Z
S
Source
Base part number
AUIRFU540Z
AUIRFR540Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU540Z
AUIRFR540Z
AUIRFR540ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
35
25
140
91
0.61
Units
A
W
W/°C
V_GS
E_AS
E_AS (Tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
± 20
V
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
39
75
mJ
Avalanche Current 
See Fig.15,16, 12a, 12b
A
Repetitive Avalanche Energy 
mJ
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient ( PCB Mount) 
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.64
50
110
Units
°C/W
2015-12-2