AUIRFR4292 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
V_DSS
R_DS(on)
I_D
D
AUIRFR4292
AUIRFU4292
typ.
max.
250V
275m
345m
9.3A
D
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
S
G
D-Pak
AUIRFR4292
S
GD
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Base part number
AUIRFU4292
AUIRFR4292
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left 3000
Tape and Reel Right 3000
Orderable Part Number
AUIRFU4292
AUIRFR4292
AUIRFR4292TRL
AUIRFR4292TRR
Note
EOL notice # 530
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (Tested)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient ( PCB Mount) 
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
°C/W
2015-10-12