AUIRFP4568 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
AUIRFP4568
Features
 Advanced Planar Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
V_DSS
R_DS(on) typ.
max.
I_D
150V
4.8m
5.9m
171A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
G
Gate
Base part number
AUIRFP4568
Package Type
TO-247AC
Standard Pack
Form
Quantity
Tube
25
G ^DS
TO-247AC
AUIRFP4568
D
Drain
S
Source
Orderable Part Number
AUIRFP4568
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
171
121
684
517
3.45
± 30
763
See Fig.14,15, 22a, 22b
18.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface
R_JA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
2015-10-21