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AUIRFP4310Z Datasheet, PDF (1/9 Pages) Infineon Technologies AG – AUTOMOTIVE GRADE | |||
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AUTOMOTIVE GRADE
AUIRFP4310Z
Features
ï· Advanced Process Technology
ï· Ultra Low On-Resistance
ï· Dynamic dv/dt Rating
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
4.8mï
6.0mï
128Aï
120A
D
G
Gate
D
Drain
GDS
TO-247AC
S
Source
Base Part Number
AUIRFP4310Z
Package Type
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
AUIRFP4310Z
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy
Peak Diode Recovery ï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
128ï
90
120
480
278
1.9
± 20
355
See Fig.14,15, 22a, 22b
17
-55 to + 175
300
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ï
Rï±CS
Rï±JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
âââ
0.24
âââ
Max.
0.54
âââ
40
Units
°C/W
2015-9-29
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